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3843AM 1N524 TPSMB11 SG2731J 0B103 ULN2003A 02010 19G0B01
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  Datasheet File OCR Text:
 G705SD
Description Package Dimensions
1/2 S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 4 0 V, C U R R E N T 0 . 0 3 A
The G705SD is designed for general purpose detection and high speed switching.
REF. A B C D E F
Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55
REF. G H K J L M
Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0C 10 C
Absolute Maximum Ratings at Ta = 25 :
Parameter Junction Temperature Storage Temperature Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Peak Forward Surge Current at 8.3mSec single half sine-wave Typical Junction Capacitance between Terminal Maximum Average Forward Rectified Current Total Power Dissipation Symbol Tj Tstg VRRM VRMS VDC IFSM CJ Io PD Ratings +125 -40 ~ +125 40 28 40 0.2 2.0 0.03 225 V V V A pF A mW Unit
Characteristics
at Ta = 25 :
Symbol VF IR Typ. 0.37 1.0 Unit V uA Test Condition IF = 1mA VR = 10V
Characteristics Maximum Instantaneous Forward Voltage Maximum Average Reverse Current
2/2
Characteristics Curve
Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165


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